mar. 2001 3.5 0.2 2.2 0.2depth 3.5 0.2 2.2 0.2depth 6.35 10.8 85 0.2 85 0.2 120max 12 2 10.5 1 26 0.5 type name 0.4min 0.4min conditions applied for all conduction angles f = 60hz, sine wave = 180 , t f = 65 c one half cycle at 60hz, t j =125 c i fm = 1500a, v r 2250v, t j = 125 c, with clamp circuit (see fig. 1, 2) (recommended value 47kn) typical 1220g 4500 4500 3600 3000 mitsubishi soft recovery diodes FD1500BV-90DA high power, high frequency, press pack type FD1500BV-90DA outline drawing dimensions in mm application free wheel diode for gct thyristor high-power inverters power supplies as high frequency rectifiers ? i f(av) average forward current ..................... 1500a ? v rrm repetitive peak reverse voltage ................... 4500v ? q rr reverse recovery charge ................. 3600 c ? press pack type unit symbol v rrm v rsm v r(dc) v ltds repetitive peak reverse voltage non-repetitive peak reverse voltage dc reverse voltage long term dc stability voltage at 100fit parameter v v v v maximum ratings voltage class 2350 1500 30 3.7 10 6 2000 ?0 ~ 125 ?0 ~ 150 39 ~ 55 rms forward current average forward current surge forward current current-squared, time integration critical rate of rise of reverse recovery current junction temperature storage temperature mounting force required weight a a ka a 2 s a/ s c c kn g i f(rms) i f(av) i fsm i 2 t d i /d t t j t stg symbol parameter unit ratings
mar. 2001 gct l(load) cd i cd i d i d i : FD1500BV-90DA cc : 6 f rc = 2 ? lc = 0.3 h cc cc lc rc rc 0 ifm d i /d t (0~50%ifm) 50%ifm 50%irm 90%irm q rr = (trr irm)/2 trr ta tb irm repetitive peak reverse current forward voltage reverse recovery charge reverse recovery loss soft recovery rate thermal resistance mitsubishi soft recovery diodes FD1500BV-90DA high power, high frequency, press pack type i rrm v fm q rr erec tb/ta r th(j-f) ma v c j/p c/w symbol parameter test conditions limits min. typ. max. unit electrical characteristics v rm = 4500v, t j = 125 c i fm = 3400a, t j = 125 c i fm = 1500a, d i /d t = 1000a/ s, v r = 2250v, t j = 125 c with clamp circuit (see fig. 1, 2) junction to fin 8.0 2 150 3.5 3600 0.011 fig. 1 (definition of reverse recovery waveform) fig. 2 (reverse recovery test circuit)
mar. 2001 mitsubishi soft recovery diodes FD1500BV-90DA high power, high frequency, press pack type performance curves 012345678 10 4 7 5 3 2 10 3 7 5 3 2 10 2 7 5 3 2 10 1 0 500 1000 1500 2000 2500 3000 12 16 20 4 8 10 14 18 2 6 0 0 23 10 ? 5710 ? 23 10 0 5710 1 23 5710 ? 23 5710 0 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.002 forward current (a) forward voltage (v) maximum forward characteristics forward current i f (a) erec vs if (typical) thermal impedance ( c/w) time (s) maximum thermal impedance characteristic (junction to fin) reverse recovery loss erec (j/p) 0 500 1000 1500 2000 2500 3000 6000 8000 10000 2000 4000 5000 7000 9000 1000 3000 0 forward current i f (a) q rr vs if (typical) reverse recovery charge q rr ( c) t j = 125 c t j = 25 c condition vr = 2250v, t j =125 c d i /d t = 1000a/ s with clamp circuit with clamp circuit condition vr = 2250v, t j =125 c d i /d t = 1000a/ s
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